unisonic technologies co., ltd 2sb1216 npn planar transistor www.unisonic.com.tw 1 of 3 copyright ? 2015 unisonic technologies co., ltd qw-r225-006.a high current switchig applications ? features * low collector-to-emitter saturation voltage * good linearity of h fe * small and slim package facilitating compactness of sets. * high f t * fast switching speed * complement the 2sd1816 ? ordering information ordering number package pin assignment packing lead free halogen free 1 2 3 2SB1216L-X-TF3-T 2sb1216g-x-tf3-t to-220f b c e tube note: pin assignment: b: base c: collector e: emitter ? marking
2sb1216 npn planar transistor unisonic technologies co., ltd 2 of 3 www.unisonic.com.tw qw-r225-006.a ? absolute maximum ratings (t a =25c, unless otherwise specified) parameter symbol ratings unit collector-base voltage v cbo -120 v collector-emitter voltage v ceo -100 v emitter-base voltage v ebo -6 v collector current dc i c -4 a pulse(note 1) -8 a collector power dissipation p d 2 w junction temperature t j +150 ? c storage temperature t stg -40 ~ +150 ? c note: 1.duty=1/2, pw=20ms 2. absolute maximum ratings are those values bey ond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. ? electrical characteristics (t a =25c, unless otherwise specified) parameter symbol test conditions min typ max unit collector base breakdown voltage bv cbo i c =10 a, i e =0 -120 v collector emitter breakdown voltage bv ceo i c =1ma, r b = -100 v emitter base breakdown voltage bv ebo i e =10 a, i c =0 -6 v base-emitter satura tion voltage v be ( sat ) i c = 2a, i b =0.2a -0.9 -1.2 v collector-emitter satu ration voltage v ce ( sat ) i c = 2a, i b =0.2a -200 -500 mv collector cut-off current i cbo v cb = 100 v, i e =0 -1 a emitter cut-off current i ebo v eb = 4v, i c =0 -1 a dc current transfer ratio h fe1 v ce = 5v, i c = 0.5a 70 400 h fe2 v ce =5v, i c = 3a 40 transition frequency f t v ce =10v, i c =0.5a 130 mhz output capacitance c ob v cb =10v, i e =0a, f =1mhz 65 pf turn-on time t on see test circuit 100 ns storage time t stg see test circuit 800 ns fall time t f see test circuit 50 ns ? classification of h fe1 rank q r s t range 70 -140 100 - 200 140 - 280 200 - 400
2sb1216 npn planar transistor unisonic technologies co., ltd 3 of 3 www.unisonic.com.tw qw-r225-006.a ? test circuit input output i b 1 i b2 50v 50 -5v 100 + 470 + v r r b pw=20 s duty cycle 1% i c =10, i b1 = -10, i b2 =2a unit (resistance: , capacitance: f) utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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